Advanced CMOS Processes Focused Technology Review

["Amy Cole" <amy.cole@xxxxxxxxxxxxxxxxxxxxxx>]

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Advanced CMOS Processes Focused Technology Review

This report is a technical trends summary of advanced CMOS devices released in recent years and 2014 year-to-date. Application spaces reviewed include: microprocessors, mobile applications processors, SoCs, NAND, and DRAM, etc.

The Focused Technology Review is an annual report summarizing the process technologies used in the previous year's new semiconductor products in the Logic and Memory sectors. It comprises condensed information from our Structural Analyses and Process Reviews published in 2014. Further details can be found in the Table of Contents.

For more information please click on:
http://www.researchandmarkets.com/publication/mobgdfp/2014_advanced_cmos_processes

Title Index:

Introduction
Intel's HKMG Evolution - from 45 nm Planar to 22 nm HKMG Tri-Gate Processes
TSMC 28 nm HP, LP, HPL, and HPM Processes
Panasonic 32 nm Gate-First HKMG Processes
GLOBALFOUNDRIES 32 nm and 28 nm Gate-First HKMG Processes
Samsung 32 nm and 28 nm HKMG Gate-First LP Processes
IBM 32 nm HKMG Gate-First HP SOI CMOS Process
UMC 45 nm and 32/28 nm
Flash Memories: Toshiba 24 nm and 19 nm, Samsung 21 nm, Hynix 21 nm, andIntel/Micron 20 nm
Embedded Flash: Freescale Nanoparticle Charge Storage and Texas InstrumentsSplit-Gate NOR
DRAM: Elpida 30 nm, Micron 30 nm, Samsung 26 nm, and Hynix 26 nm
Embedded DRAM: Intel 22 nm CoB, IBM 32 nm Trench, and Renesas 45 nm CoB
Phase Change Memory (PCM): Micron

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Thank you for your consideration.

Best Regards,

Amy Cole
Senior Manager
Research and Markets Ltd
amy.cole@xxxxxxxxxxxxxxxxxxxxxx

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